SIDC30D120E6X1SA2
Infineon Technologies
Infineon Technologies
DIODE GEN PURP 1.2KV 35A WAFER
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Boost your electronic designs with SIDC30D120E6X1SA2 Single Rectifier Diodes by Infineon Technologies, offering unparalleled efficiency and durability. Ideal for power supplies, inverters, and DC-DC converters, these diodes feature ultra-low leakage and high junction temperature tolerance. Their robust design ensures stable performance in extreme conditions. Whether for prototyping or mass production, Infineon Technologies has you covered. Request a quote or technical support today!
Specifications
- Product Status: Discontinued at Digi-Key
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 35A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 35 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 150°C
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Infineon Technologies