Shopping cart

Subtotal: $0.00

SIDC10D120H8X1SA2

Infineon Technologies
SIDC10D120H8X1SA2 Preview
Infineon Technologies
DIODE GEN PURP 1.2KV 15A WAFER
$0.00
Available to order
Reference Price (USD)
1+
$1.93000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 15A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 7.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 175°C

Related Products

Microchip Technology

JAN1N6764R

Taiwan Semiconductor Corporation

MUR320S R7

Microsemi Corporation

HU20260R

Microchip Technology

JAN1N6306

Diodes Incorporated

RS1A-13-G

Taiwan Semiconductor Corporation

HER606G A0G

Diodes Incorporated

DSR10F600P

Infineon Technologies

SIDC81D120H8X1SA3

Taiwan Semiconductor Corporation

HS3D R7

Diodes Incorporated

S1J-13-G

Top