Shopping cart

Subtotal: $0.00

SIDC06D120H8X1SA2

Infineon Technologies
SIDC06D120H8X1SA2 Preview
Infineon Technologies
DIODE GEN PURP 1.2KV 7.5A WAFER
$0.00
Available to order
Reference Price (USD)
1+
$1.26000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 7.5A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 7.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 175°C

Related Products

Comchip Technology

CDBMTS250-HF

Renesas Electronics America Inc

HSM223CTL-E

Microchip Technology

DSB5819

Rohm Semiconductor

RF501B6STL

Taiwan Semiconductor Corporation

SR1504HA0G

Taiwan Semiconductor Corporation

S4D R7

Renesas Electronics America Inc

HSM276STR-E

Vishay General Semiconductor - Diodes Division

VS-95-9836PBF

Micro Commercial Co

SB1520-TP

Vishay General Semiconductor - Diodes Division

IRKE56/12A

Top