SIDC02D60F6X1SA1
Infineon Technologies
Infineon Technologies
DIODE GEN PURP 600V 3A WAFER
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Revolutionize your power electronics with Infineon Technologies's SIDC02D60F6X1SA1 Single Rectifier Diodes, offering exceptional performance and reliability. These diodes are ideal for high-frequency and high-voltage applications, including telecommunications and medical devices. With advanced features like low forward drop and high temperature operation, they set the benchmark for quality. Infineon Technologies provides solutions you can trust. Get started by sending us your requirements!
Specifications
- Product Status: Obsolete
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 3A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 27 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -40°C ~ 150°C
Related Products
Vishay General Semiconductor - Diodes Division
GPP60GL-6000HE3/54
Taiwan Semiconductor Corporation
BAT54W RVG
Microchip Technology
MSASC75W30FV/TR
Microchip Technology
JANTX1N6912UTK2AS
Sanken
RM 2
Microchip Technology
MSASC25W15K/TR
Taiwan Semiconductor Corporation
S3M R6
Micro Commercial Co
SRA355-TP
Vishay Semiconductor Opto Division
301UR100 G BK G
STMicroelectronics