SIB452DK-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 190V 1.5A PPAK SC75
$0.82
Available to order
Reference Price (USD)
3,000+
$0.33900
6,000+
$0.31700
15,000+
$0.30600
30,000+
$0.30000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance SIB452DK-T1-GE3 from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, SIB452DK-T1-GE3 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 190 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SC-75-6
- Package / Case: PowerPAK® SC-75-6
Related Products
Diotec Semiconductor
DIT090N06
Fairchild Semiconductor
FDS6680S
onsemi
FQA40N25
Renesas Electronics America Inc
TBB1005EMTL-E
Rohm Semiconductor
RSU002N06T106
STMicroelectronics
STS7P4LLF6
IXYS
IXTT10N100D2
STMicroelectronics
STP100N8F6
onsemi
FQPF32N20C
Rectron USA