SIA950DJ-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 190V 0.95A SC-70-6
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The SIA950DJ-T1-GE3 from Vishay Siliconix is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, SIA950DJ-T1-GE3 offers the reliability you need. Contact us now to discuss how we can support your project requirements with Vishay Siliconix s cutting-edge solutions.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 190V
- Current - Continuous Drain (Id) @ 25°C: 950mA
- Rds On (Max) @ Id, Vgs: 3.8Ohm @ 360mA, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 100V
- Power - Max: 7W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SC-70-6 Dual
- Supplier Device Package: PowerPAK® SC-70-6 Dual
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