SIA517DJ-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N/P-CH 12V 4.5A SC-70-6
$0.67
Available to order
Reference Price (USD)
3,000+
$0.25270
6,000+
$0.23730
15,000+
$0.22190
30,000+
$0.21112
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic circuits with Vishay Siliconix s SIA517DJ-T1-GE3, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how SIA517DJ-T1-GE3 can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
- Power - Max: 6.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SC-70-6 Dual
- Supplier Device Package: PowerPAK® SC-70-6 Dual
Related Products
General Electric
GE12047CCA3
onsemi
FTCO3V455A1
Infineon Technologies
BSD235CH6327XTSA1
onsemi
NVMFD5C446NLT1G
STMicroelectronics
STS8DN6LF6AG
Panjit International Inc.
PJX8603_R1_00001
Diodes Incorporated
DMN2004VK-7
onsemi
NTMFD4C85NT1G
Vishay Siliconix
SI5515CDC-T1-E3
Diodes Incorporated