SIA465EDJ-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 12A PPAK SC70-6
$0.17
Available to order
Reference Price (USD)
6,000+
$0.17628
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with SIA465EDJ-T1-GE3, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SIA465EDJ-T1-GE3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 16.5mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 19W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SC-70-6 Single
- Package / Case: PowerPAK® SC-70-6
Related Products
Renesas Electronics America Inc
RJK0393DPA-0G#J7A
Microchip Technology
APTM120UM70FAG
Infineon Technologies
IPB65R041CFD7ATMA1
Diodes Incorporated
DMTH10H003SPSW-13
Vishay Siliconix
SIHB186N60EF-GE3
onsemi
NVTFWS007N08HLTAG
Diodes Incorporated
DMN67D8LV-7
Renesas
RJK6002DPH-E0#T2
Renesas
2SJ607-ZJ-AZ
Micro Commercial Co