SI8900EDB-T2-E1
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 20V 5.4A 10-MFP
$0.00
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Reference Price (USD)
3,000+
$1.71930
Exquisite packaging
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Enhance your electronic applications with Vishay Siliconix s SI8900EDB-T2-E1, a leading product in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are known for their high-speed performance, low energy consumption, and robust design. Perfect for use in switching regulators, audio systems, and communication devices. Discover the benefits of SI8900EDB-T2-E1 today get in touch with us for a detailed quote and technical support.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.4A
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 1V @ 1.1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-UFBGA, CSPBGA
- Supplier Device Package: 10-Micro Foot™ CSP (2x5)
