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SI8816EDB-T2-E1

Vishay Siliconix
SI8816EDB-T2-E1 Preview
Vishay Siliconix
MOSFET N-CH 30V 4MICROFOOT
$0.56
Available to order
Reference Price (USD)
3,000+
$0.15791
6,000+
$0.14834
15,000+
$0.13877
30,000+
$0.12728
75,000+
$0.12250
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Rds On (Max) @ Id, Vgs: 109mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-Microfoot
  • Package / Case: 4-XFBGA

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