SI8405DB-T1-E1
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 12V 3.6A 4MICROFOOT
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SI8405DB-T1-E1 by Vishay Siliconix. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SI8405DB-T1-E1 inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 55mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.47W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-Microfoot
- Package / Case: 4-XFBGA, CSPBGA
Related Products
Alpha & Omega Semiconductor Inc.
AOD4C60
Microsemi Corporation
APT9F100S
Vishay Siliconix
IRFI9610G
Infineon Technologies
AUIRF3710ZS
Alpha & Omega Semiconductor Inc.
AOTF12N60FD
Infineon Technologies
IRFZ34EPBF
Infineon Technologies
IRLU014N
Alpha & Omega Semiconductor Inc.
AO4485_102
onsemi
FQPF6N15
Infineon Technologies