SI7621DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 4A PPAK1212-8
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Enhance your circuit performance with SI7621DN-T1-GE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust SI7621DN-T1-GE3 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 3.9A, 4.5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 12.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
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