SI7403BDN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 8A PPAK1212-8
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with SI7403BDN-T1-GE3 by Vishay Siliconix, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SI7403BDN-T1-GE3 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 74mOhm @ 5.1A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 9.6W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
Related Products
Infineon Technologies
IRF7202TR
STMicroelectronics
STP10NK70ZFP
Infineon Technologies
AUIRF3805S
Vishay Siliconix
SI5401DC-T1-GE3
Vishay Siliconix
IRFBC30ASTRRPBF
Vishay Siliconix
SI6410DQ-T1-E3
Toshiba Semiconductor and Storage
TPC8031-H(TE12LQM)
NXP USA Inc.
PHD63NQ03LT,118
onsemi
FDMC7692_F126
Fairchild Semiconductor