SI7326DN-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 6.5A PPAK 1212-8
$0.95
Available to order
Reference Price (USD)
3,000+
$0.38985
6,000+
$0.36455
15,000+
$0.35190
30,000+
$0.34500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with SI7326DN-T1-E3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust SI7326DN-T1-E3 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
Related Products
Infineon Technologies
BSZ088N03LSG
Nexperia USA Inc.
PXP020-20QXJ
Renesas Electronics America Inc
RJL60S5DPP-E0#T2
Rohm Semiconductor
US6U37TR
Infineon Technologies
AUIRFSL4010
Toshiba Semiconductor and Storage
SSM3K72CTC,L3F
Harris Corporation
HUF75344P3
onsemi
NTP150N65S3HF
Vishay Siliconix
SQ7415CENW-T1_GE3
Renesas Electronics America Inc