SI6467DQ
Fairchild Semiconductor
Fairchild Semiconductor
P-CHANNEL MOSFET
$0.24
Available to order
Reference Price (USD)
1+
$0.24000
500+
$0.2376
1000+
$0.2352
1500+
$0.2328
2000+
$0.2304
2500+
$0.228
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance SI6467DQ from Fairchild Semiconductor, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, SI6467DQ delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 9.2A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 5878 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 600mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSSOP
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Related Products
onsemi
FDPF4D5N10C
Vishay Siliconix
SQJ464EP-T1_BE3
Infineon Technologies
IPB70N10SL16ATMA1
Infineon Technologies
IPP08CNE8NG
STMicroelectronics
STH270N4F3-2
Alpha & Omega Semiconductor Inc.
AON6362
Microchip Technology
APT18M100S
IXYS
IXFB210N20P
Vishay Siliconix
IRL630PBF
onsemi