SI5513CDC-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N/P-CH 20V 4A 1206-8
$0.65
Available to order
Reference Price (USD)
3,000+
$0.24368
6,000+
$0.22883
15,000+
$0.21398
30,000+
$0.20358
Exquisite packaging
Discount
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The SI5513CDC-T1-E3 from Vishay Siliconix is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, SI5513CDC-T1-E3 delivers consistent quality. Contact us now to learn more and secure your supply of Vishay Siliconix s premium semiconductors.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
- Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
- Power - Max: 3.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET™
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