SI5511DC-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N/P-CH 30V 4A 1206-8
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Boost your project s performance with Vishay Siliconix s SI5511DC-T1-E3, a standout in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components offer superior features such as high efficiency, low noise, and extended lifespan, making them suitable for a variety of advanced applications. From IoT devices to energy-efficient systems, SI5511DC-T1-E3 provides the reliability you need. Don t wait reach out to us today for more information and to request a sample of SI5511DC-T1-E3.
Specifications
- Product Status: Obsolete
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A
- Rds On (Max) @ Id, Vgs: 55mOhm @ 4.8A, 4.5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
- Power - Max: 3.1W, 2.6W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET™
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