SI5468DC-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 6A 1206-8
$0.51
Available to order
Reference Price (USD)
3,000+
$0.15320
6,000+
$0.14440
15,000+
$0.13560
30,000+
$0.12504
75,000+
$0.12064
Exquisite packaging
Discount
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Optimize your electronic systems with SI5468DC-T1-GE3, a high-quality Transistors - FETs, MOSFETs - Single from Vishay Siliconix. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SI5468DC-T1-GE3 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 28mOhm @ 6.8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta), 5.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 1206-8 ChipFET™
- Package / Case: 8-SMD, Flat Lead
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