SI5411EDU-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 12V 25A PPAK
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Boost your electronic applications with SI5411EDU-T1-GE3, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SI5411EDU-T1-GE3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 8.2mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® ChipFet Single
- Package / Case: PowerPAK® ChipFET™ Single
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