SI4831BDY-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 30V 6.6A 8SO
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Vishay Siliconix presents SI4831BDY-T1-E3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SI4831BDY-T1-E3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 15 V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Microchip Technology
MCP87130T-U/MF
onsemi
NVMFS5C450NLWFT3G
Infineon Technologies
IRFR3708TRL
onsemi
IRFS644B_FP001
STMicroelectronics
STP4NK50Z
NXP USA Inc.
BUK7Y15-100E115
onsemi
FDMS9411L-F085
onsemi
NTMFS5C410NLTWFT3G
Vishay Siliconix
IRFPG30
Vishay Siliconix