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SI4451DY-T1-GE3

Vishay Siliconix
SI4451DY-T1-GE3 Preview
Vishay Siliconix
MOSFET P-CH 12V 10A 8SO
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Specifications

  • Product Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 8.25mOhm @ 14A, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 850µA
  • Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 4.5 V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)

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