SI3993DV-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2P-CH 30V 1.8A 6-TSOP
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SI3993DV-T1-GE3 from Vishay Siliconix is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, SI3993DV-T1-GE3 delivers consistent quality. Contact us now to learn more and secure your supply of Vishay Siliconix s premium semiconductors.
Specifications
- Product Status: Obsolete
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.8A
- Rds On (Max) @ Id, Vgs: 133mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 830mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
Related Products
Alpha & Omega Semiconductor Inc.
AO7600_001
Rohm Semiconductor
SP8M9TB
onsemi
NTJD4401NT1
onsemi
NDS9933
Vishay Siliconix
SI5933DC-T1-GE3
onsemi
NTJD4105CT4G
Diodes Incorporated
DMN3012LDG-13
onsemi
NTTD1P02R2G
Diodes Incorporated
ZXMD65P02N8TA
Rohm Semiconductor