SI3443DDV-T1-BE3
Vishay Siliconix
Vishay Siliconix
P-CHANNEL 20-V (D-S) MOSFET
$0.45
Available to order
Reference Price (USD)
1+
$0.45000
500+
$0.4455
1000+
$0.441
1500+
$0.4365
2000+
$0.432
2500+
$0.4275
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of SI3443DDV-T1-BE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SI3443DDV-T1-BE3 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 47mOhm @ 4.7A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Infineon Technologies
IPW65R090CFD7XKSA1
Renesas Electronics America Inc
RJK6035DPP-A0#T2
Goford Semiconductor
G10N03S
Goford Semiconductor
G100N03D5
Micro Commercial Co
SL3407-TP
Infineon Technologies
IPT030N12N3GATMA1
onsemi
NDPL100N10BG
Infineon Technologies
IPZ40N04S53R9ATMA1
onsemi
NTND31200PZTAG
Diodes Incorporated