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SI3433CDV-T1-E3

Vishay Siliconix
SI3433CDV-T1-E3 Preview
Vishay Siliconix
MOSFET P-CH 20V 6A 6TSOP
$0.53
Available to order
Reference Price (USD)
3,000+
$0.19855
6,000+
$0.18645
15,000+
$0.17435
30,000+
$0.16588
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 8 V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6 Thin, TSOT-23-6

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