SI2337DS-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 80V 2.2A SOT23-3
$1.05
Available to order
Reference Price (USD)
3,000+
$0.47560
6,000+
$0.45327
15,000+
$0.43732
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with SI2337DS-T1-GE3, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SI2337DS-T1-GE3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 760mW (Ta), 2.5W (Tc)
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
NTE Electronics, Inc
NTE2987
onsemi
FDB8445
onsemi
NVTYS010N04CLTWG
Renesas Electronics America Inc
2SJ166-T1B-A
Infineon Technologies
IRLHM620TRPBF
Fairchild Semiconductor
FDD6778A
Vishay Siliconix
SISA14BDN-T1-GE3
Rohm Semiconductor
RF6E045AJTCR
Alpha & Omega Semiconductor Inc.
AOT16N50
onsemi