SI2302DDS-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V 2.9A SOT23-3
$0.52
Available to order
Reference Price (USD)
3,000+
$0.15512
6,000+
$0.14621
15,000+
$0.13730
30,000+
$0.12660
75,000+
$0.12215
Exquisite packaging
Discount
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Boost your electronic applications with SI2302DDS-T1-GE3, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SI2302DDS-T1-GE3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id: 850mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 710mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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