SI1058X-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V 1.3A SC89-6
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Experience the power of SI1058X-T1-E3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SI1058X-T1-E3 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 91mOhm @ 1.3A, 4.5V
- Vgs(th) (Max) @ Id: 1.55V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 236mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-89 (SOT-563F)
- Package / Case: SOT-563, SOT-666
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