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SI1029X-T1-E3

Vishay Siliconix
SI1029X-T1-E3 Preview
Vishay Siliconix
MOSFET N/P-CH 60V SOT563F
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Specifications

  • Product Status: Obsolete
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SC-89 (SOT-563F)

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