SI1024X-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 20V 0.485A SC89-6
$0.58
Available to order
Reference Price (USD)
3,000+
$0.18050
6,000+
$0.16950
15,000+
$0.15850
30,000+
$0.15080
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance SI1024X-T1-GE3 from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Vishay Siliconix s SI1024X-T1-GE3 enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 485mA
- Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 250mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SC-89 (SOT-563F)
Related Products
Vishay Siliconix
SI4936BDY-T1-E3
Toshiba Semiconductor and Storage
SSM6N40TU,LF
Diodes Incorporated
DMC1229UFDB-7
Advanced Linear Devices Inc.
ALD210800SCL
Diodes Incorporated
DMN33D9LV-13A
Diodes Incorporated
DMC1030UFDB-7
onsemi
NTMD3P03R2
Nexperia USA Inc.
PMDXB1200UPEZ
Renesas Electronics America Inc
FS10ASJ-3-T13#C01
Diodes Incorporated