SH8M11TB1
Rohm Semiconductor
Rohm Semiconductor
MOSFET N/P-CH 30V 3.5A 8SOP
$0.00
Available to order
Reference Price (USD)
2,500+
$0.26100
Exquisite packaging
Discount
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The SH8M11TB1 by Rohm Semiconductor is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Rohm Semiconductor s SH8M11TB1 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.5A
- Rds On (Max) @ Id, Vgs: 98mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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