SGL50N60RUFDTU
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$0.00
Available to order
Reference Price (USD)
1+
$8.18000
10+
$7.42400
375+
$5.92968
750+
$5.43160
1,125+
$4.76747
Exquisite packaging
Discount
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Discover high-performance SGL50N60RUFDTU Single IGBTs from Fairchild Semiconductor, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, SGL50N60RUFDTU ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
- Power - Max: 250 W
- Switching Energy: 1.68mJ (on), 1.03mJ (off)
- Input Type: Standard
- Gate Charge: 145 nC
- Td (on/off) @ 25°C: 26ns/66ns
- Test Condition: 300V, 50A, 5.9Ohm, 15V
- Reverse Recovery Time (trr): 100 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: HPM F2
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