SF808GHC0G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 8A TO220AB
$0.00
Available to order
Reference Price (USD)
4,000+
$0.34800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Revolutionize your power electronics with Taiwan Semiconductor Corporation's SF808GHC0G Single Rectifier Diodes, offering exceptional performance and reliability. These diodes are ideal for high-frequency and high-voltage applications, including telecommunications and medical devices. With advanced features like low forward drop and high temperature operation, they set the benchmark for quality. Taiwan Semiconductor Corporation provides solutions you can trust. Get started by sending us your requirements!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Taiwan Semiconductor Corporation
SS23L M2G
Toshiba Semiconductor and Storage
TRS10E65C,S1Q
Vishay General Semiconductor - Diodes Division
SS2PH10HM3/85A
Microsemi Corporation
MS106E3/TR12
Vishay General Semiconductor - Diodes Division
UGB15JT-E3/81
Vishay General Semiconductor - Diodes Division
MBRF10H100HE3/45
Taiwan Semiconductor Corporation
UG54GHA0G
Diodes Incorporated
RL205-T
Taiwan Semiconductor Corporation
SK55C
Taiwan Semiconductor Corporation