SE10FJ-M3/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO219AB
$0.07
Available to order
Reference Price (USD)
30,000+
$0.06690
Exquisite packaging
Discount
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Streamline your power solutions with SE10FJ-M3/I Single Rectifier Diodes from Vishay General Semiconductor - Diodes Division, a trusted name in discrete semiconductors. These diodes are perfect for high-efficiency rectification in consumer and industrial electronics. Features such as low reverse recovery time and high surge capability make them a preferred choice. Applications include LED lighting, HVAC systems, and more. Vishay General Semiconductor - Diodes Division ensures top-notch performance and reliability. Inquire today to learn how we can meet your needs!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 780 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
- Operating Temperature - Junction: -55°C ~ 175°C
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