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SCT3105KLHRC11

Rohm Semiconductor
SCT3105KLHRC11 Preview
Rohm Semiconductor
SICFET N-CH 1200V 24A TO247N
$22.95
Available to order
Reference Price (USD)
1+
$18.91000
10+
$17.38200
25+
$16.66120
100+
$14.67980
450+
$13.95931
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 3.81mA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
  • Vgs (Max): +22V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V
  • FET Feature: -
  • Power Dissipation (Max): 134W
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3

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