SCT3080KW7TL
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 30A TO263-7
$20.94
Available to order
Reference Price (USD)
1+
$20.94000
500+
$20.7306
1000+
$20.5212
1500+
$20.3118
2000+
$20.1024
2500+
$19.893
Exquisite packaging
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Enhance your circuit performance with SCT3080KW7TL, a premium Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust SCT3080KW7TL for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 159W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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