Shopping cart

Subtotal: $0.00

S1MLHMHG

Taiwan Semiconductor Corporation
S1MLHMHG Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 1000V 1A SUB SMA
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 175°C

Related Products

Vishay General Semiconductor - Diodes Division

AU2PMHM3/87A

Vishay General Semiconductor - Diodes Division

FGP30DHE3/54

Vishay General Semiconductor - Diodes Division

EGP10CE-M3/73

Vishay General Semiconductor - Diodes Division

BY500-200-E3/54

Infineon Technologies

D690S26TXPSA1

Central Semiconductor Corp

CR3F-040 BK

Rohm Semiconductor

RB070M-30TR

Taiwan Semiconductor Corporation

SS215L RQG

Vishay General Semiconductor - Diodes Division

USB260-E3/52T

Taiwan Semiconductor Corporation

SF37GHB0G

Top