S1DHE3_A/H
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO214AC
$0.45
Available to order
Reference Price (USD)
1,800+
$0.08694
3,600+
$0.07560
5,400+
$0.06804
12,600+
$0.06048
45,000+
$0.05670
90,000+
$0.05292
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Revolutionize your power electronics with Vishay General Semiconductor - Diodes Division's S1DHE3_A/H Single Rectifier Diodes, offering exceptional performance and reliability. These diodes are ideal for high-frequency and high-voltage applications, including telecommunications and medical devices. With advanced features like low forward drop and high temperature operation, they set the benchmark for quality. Vishay General Semiconductor - Diodes Division provides solutions you can trust. Get started by sending us your requirements!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.8 µs
- Current - Reverse Leakage @ Vr: 1 µA @ 200 V
- Capacitance @ Vr, F: 12pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Panjit International Inc.
STR8100LBF_R1_00701
Microchip Technology
JANTXV1N5617US/TR
Comchip Technology
CFRA105-G
GeneSiC Semiconductor
MBRH240200
Comchip Technology
CDST-4148-G
Vishay General Semiconductor - Diodes Division
RS1D-M3/61T
STMicroelectronics
STTH810D
Taiwan Semiconductor Corporation
S4G V7G
Microchip Technology
JANS1N5554US/TR
onsemi