RYE002N05TCL
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 50V 200MA EMT3
$0.00
Available to order
Reference Price (USD)
3,000+
$0.03496
6,000+
$0.03040
15,000+
$0.02584
30,000+
$0.02432
75,000+
$0.02280
150,000+
$0.02128
Exquisite packaging
Discount
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Upgrade your electronic designs with RYE002N05TCL by Rohm Semiconductor, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, RYE002N05TCL ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
- Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: EMT3
- Package / Case: SC-75, SOT-416
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