RSE002N06TL
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 60V 250MA EMT3
$0.00
Available to order
Reference Price (USD)
3,000+
$0.06500
6,000+
$0.05850
15,000+
$0.05200
30,000+
$0.04875
75,000+
$0.04550
Exquisite packaging
Discount
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Rohm Semiconductor presents RSE002N06TL, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, RSE002N06TL delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: EMT3
- Package / Case: SC-75, SOT-416
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