RS1P600BHTB1
Rohm Semiconductor
Rohm Semiconductor
NCH 100V 60A, HSOP8, POWER MOSFE
$1.59
Available to order
Reference Price (USD)
1+
$1.59450
500+
$1.578555
1000+
$1.56261
1500+
$1.546665
2000+
$1.53072
2500+
$1.514775
Exquisite packaging
Discount
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RS1P600BHTB1 by Rohm Semiconductor is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, RS1P600BHTB1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 8.8mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 35W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN
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