Shopping cart

Subtotal: $0.00

RS1KLHR3G

Taiwan Semiconductor Corporation
RS1KLHR3G Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 800MA SUBSMA
$0.21
Available to order
Reference Price (USD)
3,600+
$0.07395
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Diodes Incorporated

BAT64C-7-F

Panjit International Inc.

UF106G_R2_00001

onsemi

S3K

Comchip Technology

CDBB260-G

Microchip Technology

JAN1N5806URS

Diodes Incorporated

ES1A-13-F

Vishay General Semiconductor - Diodes Division

BYG22A-M3/TR3

Top