Shopping cart

Subtotal: $0.00

RS1KLHM2G

Taiwan Semiconductor Corporation
RS1KLHM2G Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 800MA SUBSMA
$0.00
Available to order
Reference Price (USD)
22,500+
$0.04675
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Infineon Technologies

BAT54WE6327

Microsemi Corporation

MS108/TR12

Taiwan Semiconductor Corporation

SR106HB0G

Vishay General Semiconductor - Diodes Division

MBRF16H60-E3/45

Taiwan Semiconductor Corporation

ESH3B M6G

Diodes Incorporated

FR301-T

Vishay General Semiconductor - Diodes Division

1N5614GP-E3/73

Infineon Technologies

BAS16WE6327HTSA1

Vishay General Semiconductor - Diodes Division

SL23HE3/52T

Vishay General Semiconductor - Diodes Division

BA159-E3/73

Top