Shopping cart

Subtotal: $0.00

RS1DL M2G

Taiwan Semiconductor Corporation
RS1DL M2G Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 800MA SUBSMA
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Taiwan Semiconductor Corporation

SS19LHRQG

Taiwan Semiconductor Corporation

HS1GL M2G

Diodes Incorporated

2A03-T

Vishay General Semiconductor - Diodes Division

AS4PMHM3/87A

Taiwan Semiconductor Corporation

6A20GH

Taiwan Semiconductor Corporation

S3JHM6G

Comchip Technology

CDBFR0240-HF

Taiwan Semiconductor Corporation

SF41G R0G

Infineon Technologies

D255N06BXPSA1

Vishay General Semiconductor - Diodes Division

VS-20ETF08STRLPBF

Top