RQ6E085BNTCR
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 30V 8.5A SOT457
$0.96
Available to order
Reference Price (USD)
3,000+
$0.33350
6,000+
$0.32200
Exquisite packaging
Discount
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Rohm Semiconductor presents RQ6E085BNTCR, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, RQ6E085BNTCR delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 14.4mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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