RQ6C065BCTCR
Rohm Semiconductor
Rohm Semiconductor
MOSFET P-CH 20V 6.5A TSMT6
$0.84
Available to order
Reference Price (USD)
3,000+
$0.25665
6,000+
$0.24780
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose RQ6C065BCTCR by Rohm Semiconductor. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with RQ6C065BCTCR inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Rds On (Max) @ Id, Vgs: 21mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
STMicroelectronics
STD20NF06T4
Infineon Technologies
IRFSL7530PBF
Vishay Siliconix
IRLL110TRPBF-BE3
Infineon Technologies
IRFP7718PBF
Fairchild Semiconductor
IRFS634B_FP001
NTE Electronics, Inc
NTE222
onsemi
NTTFS5C673NLTAG
Texas Instruments
TPIC2202KC
Taiwan Semiconductor Corporation
TSM650N15CR RLG
onsemi