RN2901,LF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K
$0.28
Available to order
Reference Price (USD)
1+
$0.28000
500+
$0.2772
1000+
$0.2744
1500+
$0.2716
2000+
$0.2688
2500+
$0.266
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience precision engineering with Toshiba Semiconductor and Storage's RN2901,LF(CT Bipolar Junction Transistor Arrays, the optimal solution for space-efficient designs. These pre-biased components eliminate external resistor needs while providing predictable performance in amplification and switching roles. Application sectors include automotive electronics, power tools, and renewable energy systems where reliability is paramount. The product family offers multiple configuration options, all featuring low quiescent current, high gain bandwidth product, and robust EMC performance. Toshiba Semiconductor and Storage provides comprehensive technical resources for RN2901,LF(CT integration. Take the next step request a quote or design consultation through our convenient inquiry portal!
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
Related Products
onsemi
NSBA113EDXV6T1
Diodes Incorporated
DDA114YH-7
Rohm Semiconductor
EMH52T2R
onsemi
NSBC113EPDXV6T1G
onsemi
NSBC114TDXV6T1G
Toshiba Semiconductor and Storage
RN1902,LXHF(CT
Infineon Technologies
BCR08PNH6327XTSA1
onsemi
NSBC123JPDXV6T5G
Toshiba Semiconductor and Storage
RN1606(TE85L,F)
onsemi