RN2309,LXHF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
AUTO AEC-Q TR PNP BRT, Q1BSR=47K
$0.40
Available to order
Reference Price (USD)
1+
$0.40000
500+
$0.396
1000+
$0.392
1500+
$0.388
2000+
$0.384
2500+
$0.38
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic projects with the RN2309,LXHF from Toshiba Semiconductor and Storage, a key player in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased offer superior performance with features like high switching speed, low power loss, and reliable operation. Ideal for automotive electronics, industrial automation, and consumer gadgets. Toshiba Semiconductor and Storage ensures top-quality components for your needs. Contact us for more information or to request samples!
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 47 kOhms
- Resistor - Emitter Base (R2): 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
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