RN2102MFV,L3XHF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
AUTO AEC-Q PNP Q1BSR=10K, Q1BER=
$0.35
Available to order
Reference Price (USD)
1+
$0.35000
500+
$0.3465
1000+
$0.343
1500+
$0.3395
2000+
$0.336
2500+
$0.3325
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RN2102MFV,L3XHF(CT from Toshiba Semiconductor and Storage is a premium selection in the Discrete Semiconductor Products market. Specifically designed as Transistors - Bipolar (BJT) - Single, Pre-Biased, these components provide exceptional reliability and efficiency. Features include fast switching speeds, high voltage tolerance, and compact design. They are perfect for applications in telecommunications, medical devices, and renewable energy systems. Choose Toshiba Semiconductor and Storage for cutting-edge semiconductor technology. Get in touch for pricing and availability details!
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
Related Products
Nexperia USA Inc.
PDTC143XU,115
onsemi
MUN2137T1G
onsemi
MUN5231T1G
Infineon Technologies
BCR129E6327HTSA1
Rohm Semiconductor
DTB113ECHZGT116
Nexperia USA Inc.
PDTA124EQB-QZ
Diodes Incorporated
DDTC115GUA-7
Toshiba Semiconductor and Storage
RN1115,LF(CT
Nexperia USA Inc.
PDTB123TT,215
Infineon Technologies