RN1308,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A USM
$0.03
Available to order
Reference Price (USD)
3,000+
$0.03213
6,000+
$0.02898
15,000+
$0.02520
30,000+
$0.02268
75,000+
$0.02016
150,000+
$0.01680
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RN1308,LF from Toshiba Semiconductor and Storage is a premium selection in the Discrete Semiconductor Products market. Specifically designed as Transistors - Bipolar (BJT) - Single, Pre-Biased, these components provide exceptional reliability and efficiency. Features include fast switching speeds, high voltage tolerance, and compact design. They are perfect for applications in telecommunications, medical devices, and renewable energy systems. Choose Toshiba Semiconductor and Storage for cutting-edge semiconductor technology. Get in touch for pricing and availability details!
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 22 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
Related Products
Panasonic Electronic Components
UNR9114J0L
Diodes Incorporated
DDTA143ZCA-7
Toshiba Semiconductor and Storage
RN1409,LXHF
onsemi
MUN2213T1
Panasonic Electronic Components
UNR515400L
Diodes Incorporated
ADTC143XUAQ-13
Diodes Incorporated
DDTC143TE-7
onsemi
DTA114YET1G
Diodes Incorporated
DDTA123YCA-7-F
Diodes Incorporated