RN1112CT(TPL3)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 20V 0.05A CST3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your projects with the RN1112CT(TPL3) by Toshiba Semiconductor and Storage, a top-tier choice in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased offer outstanding durability and precision, ensuring optimal performance in any circuit. Key features include high current gain, low saturation voltage, and thermal stability. Ideal for use in power management, signal processing, and automation systems. Toshiba Semiconductor and Storage guarantees top-notch quality and performance. Reach out now to learn more or request a sample!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 50 mA
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Resistor - Base (R1): 22 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: -
- Power - Max: 50 mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
Related Products
Panasonic Electronic Components
UNR911DG0L
Diodes Incorporated
DDTC114GKA-7-F
Toshiba Semiconductor and Storage
RN1108ACT(TPL3)
Infineon Technologies
BCR116WE6327BTSA1
Panasonic Electronic Components
UNR42100RA
Panasonic Electronic Components
DRA3115T0L
Infineon Technologies
BCR 119L3 E6327
Panasonic Electronic Components
UNR32ANG0L
onsemi
MMUN2134LT1
Rohm Semiconductor